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| VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = = 8000 8500 1200 1880 35x103 1.25 0.48 V V A A A V m Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Nov. 04 * * * * * Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Maximum rated values 1) Symbol VDSM, VRSM VDRM, VRRM VRSM dV/dtcrit Parameter Conditions f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms tp = 5 ms, single pulse Exp. to 5360 V, Tvj = 90C Symbol Conditions IDSM IRSM 5STP 12N8500 5STP 12N8200 8500 V 8000 V 9000 V 8200 V 7700 V 8600 V 2000 V/s min typ 5STP 12N7800 7800 V 7300 V 8200 V Characteristic values max 1000 400 Unit mA mA Forward leakage current Reverse leakage current VDSM, Tvj = 90C VRSM, Tvj = 90C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 90 kN, Ta = 25 C min 35.3 56 typ max 2.9 36 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 12N8500 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t tp = 10 ms, Tvj = 90 C, VD = VR = 0 V tp = 8.3 ms, Tvj = 90 C, VD = VR = 0 V Half sine wave, Tc = 70C min typ max 1200 1880 35x10 3 Unit A A A 6 6.13x10 38x10 3 A2s A 5.99x10 min typ max 2 1.25 0.48 Tvj = 25 C Tvj = 90 C Tvj = 25 C Tvj = 90 C 150 125 600 800 6 A2s Unit V V m mA mA mA mA Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current Symbol Conditions VT V(T0) rT IH IL IT = 1500 A, Tvj = 90 C IT = 700 A - 2100 A, Tvj= 90 C Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit di/dtcrit Tvj = 90 C, ITRM = 2000 A, VD 5360 V, IFG = A, tr = 0.5 s Cont. f = 50 Hz Cont. f = 1Hz min typ max 250 1000 Unit A/s A/s s Circuit-commutated turn-off tq time Characteristic values Tvj = 90C, ITRM = 2000 A, VR = 200 V, diT/dt = -1 A/s, VD 0.67VDRM, dvD/dt = 20V/s 600 Parameter Recovery charge Symbol Conditions Qrr Tvj = 90C, ITRM = A, VR = 200 V, diT/dt = -1 A/s VD = 0.4VRM, IFG = 2 A, tr = 0.5 s, Tvj = 25 C min 2800 typ max 3400 Unit As Gate turn-on delay time tgd 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1044-02 Nov. 04 page 2 of 6 5STP 12N8500 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Average gate power loss Characteristic values Symbol Conditions VFGM IFGM VRGM PG(AV) Symbol Conditions VGT IGT VGD IGD Tvj = 25 C Tvj = 25 C VD = 0.4 x VDRM, Tvjmax = 90 C VD = 0.4 x VDRM, Tvjmax = 90C min typ max 12 10 10 Unit V A V see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA Parameter Gate-trigger voltage Gate-trigger current Gate non-trigger voltage Gate non-trigger current Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 90 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 81...108 kN Anode-side cooled Fm = 81...108 kN Cathode-side cooled Fm = 81...108 kN Double-side cooled Fm = 81...108 kN Single-side cooled Fm = 81...108 kN -40 min typ 140 max 5.7 11.4 11.4 1 2 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i Rth i(K/kW) i(s) 1 3.400 0.8685 2 1.260 0.1572 3 0.680 0.0219 4 0.350 0.0078 Fig. 1 Transient thermal impedance junction-to case. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1044-02 Nov. 04 page 3 of 6 5STP 12N8500 On-state characteristic model: VT = A + B iT + C ln(iT +1) + D IT Valid for iT = 200 - 4000 A A 1.9700e+0 B -1.8000e-4 C -3.0000e-1 D 6.2000e-2 Fig. 2 On-state characteristics. Tj=125C, 10ms half sine Fig. 3 Max. on-state voltage characteristics Tcase (C) 90 Double-sided cooling 85 DC 180 rectangular 180 sine 120 rectangular 80 75 70 0 200 400 600 800 1000 1200 1400 1600 1800 ITAV (A) Fig. 4 On-state power dissipation vs. mean on-state current. Turn-on losses excluded. Doc. No. 5SYA1044-02 Nov. 04 Fig. 5 Max. permissible case temperature vs. mean on-state current. page 4 of 6 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 12N8500 5STP 12N8500 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/s 1 s 5...20 s Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. diG/dt 10 % tr tp (IGM) tp (IGon) t IGon Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. IRM(A) 400 300 ITRM = 2000 A 200 max Tj = Tjmax min 102 90 80 70 5STP 12N8500 60 50 40 30 1 2 3 4 5 6 7 8 910 30 20 -diT/dt (A/s) Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1044-02 Nov. 04 page 5 of 6 5STP 12N8500 Fig. 12 Device Outline Drawing. Related application notes: Doc. Nr 5SYA2020 5SYA2034 5SYA 2036 Titel Design of RC-Snubber for Phase Control Applications Gate-drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1044-02 Nov. 04 |
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